Semikon SKD100gal123D IGBT Modules Semitrans (r) M Power Module

• Task: Communication
• Structure: Combination
• Mathematical Model: Linear
• Signal: Continuous
• Function: Automatic Control
• Certification: RoHS, CCC, ISO: 9001, CE
• Model NO.: SKD100GAL123D
• Condition: New
• Customized: Non-Customized
• Product Range: 590p
• Type: Module
• Volume: 0.01m3
• Color: Black
• Transport Package: Cartons/Wooden Box/Pallet
• Specification: 0.1KG
• Trademark: Parker-Hannifin/ SSD/ EUROTHERM
• Origin: China
• HS Code: 85049090

Product Description

Product Description

NEW MODULE SKD100GAL123D POWER MODULE ORIGINAL

IGBTs (Insulated Gate Bipolar Transistors)

Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions
Inverse Diode IF= ­ IC Tcase 25/80 °C IFM= ­ ICM Tcase = 25/80 °C; = 10 ms; sin.; 150 °C IFSM = 10 ms; °C I2t

Symbol V(BR)CES VGE(th) ICES IGES VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon 5) Eoff 5) Conditions

Inverse Diode VF = VEC VF = VEC 125 °C VTO (125) °C2) IRRM Qrr (125) °C2) FWD of types "GAL", "GAR" VF = VEC VF = VEC 125 °C VTO (125) °C2) IRRM Qrr (125) °C2) Thermal Characteristics per IGBT Rthjc per diode / FWD "GAL; GAR" Rthjc per module Rthch

Features MOS input (voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting 6 * Icnom Latch-up free Fast & soft inverse CAL diodes8) Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (10 mm) and creepage distances (20 mm). Typical Applications: 6 -115 Switching (not for linear use) Tcase = 25 °C, unless otherwise specified = ­ IC, V, ­ diF/dt = 800 A/µs, VGE V 3) Use VGEoff V 5) See fig. + 3; RGoff 15 6) The free-wheeling diodes of the GAL and GAR types have the data of the inverse diodes of SKM D 7) Visol = 4000 Vrms on request 8) CAL = Controlled Axial Lifetime Technology. Cases and mech. data B6-116

Fig. 1 Rated power dissipation Ptot = f (TC)
Fig. 4 Maximum safe operating area (SOA) = f (VCE)
Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit = f (VCE)
Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations

 

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